VBsemi Elec · FETs & Power MOSFETs · MPN IPD50N06S4L-12-VB
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| Gate Charge(Qg) | 70nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 58A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 136W |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.65nF |
60V 58A 3V 136W 1 N-channel TO-252 Single FETs, MOSFETs RoHS