VBsemi Elec · FETs & Power MOSFETs · MPN IPD49CN10NG-VB
No reviews yet — be the first to review VBsemi Elec IPD49CN10NG-VB.
| Gate Charge(Qg) | 35nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 40A |
| Output Capacitance(Coss) | 290pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 3.75W |
| RDS(on) | 35mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.6nF |
| Type | N-Channel |
N-Channel 100V 40A 3.75W Surface Mount TO-252