VBsemi Elec IPD380P06NMATMA1-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IPD380P06NMATMA1-VB

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Specifications

Gate Charge(Qg)165nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)50A
Output Capacitance(Coss)380pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation113W
RDS(on)20mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)305pF
Number1 P-Channel
Input Capacitance(Ciss)2.95nF
TypeP-Channel

Technical details

P-Channel 60V 50A 113W Surface Mount TO-252

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