VBsemi Elec · FETs & Power MOSFETs · MPN IPD30N06S2L13ATMA4-VB
No reviews yet — be the first to review VBsemi Elec IPD30N06S2L13ATMA4-VB.
| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 70nC@10V |
| Output Capacitance(Coss) | 470pF |
| Current - Continuous Drain(Id) | 58A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 136W |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF |
| RDS(on) | 13mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.65nF |
| Type | N-Channel |
N-Channel 60V 58A Surface Mount TO-252