VBsemi Elec · FETs & Power MOSFETs · MPN IPD25CN10NG-VB
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| Gate Charge(Qg) | 38nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 230pF |
| Current - Continuous Drain(Id) | 45A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 136.4W |
| RDS(on) | 18.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.4nF |
| Type | N-Channel |
N-Channel 100V 45A 136.4W Surface Mount TO-252