VBsemi Elec · FETs & Power MOSFETs · MPN IPD22N08S2L-50-VB
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| Output Capacitance(Coss) | 290pF |
|---|---|
| Pd - Power Dissipation | 107W |
| Configuration | - |
| Gate Charge(Qg) | 35nC |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| RDS(on) | 30mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.6nF |
107W 100V 1V 30mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS