VBsemi Elec · FETs & Power MOSFETs · MPN IPD170N04NG-VB
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 85nC@10V;42nC@4.5V |
| Output Capacitance(Coss) | 725pF |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 100W |
| RDS(on) | 12mΩ@10V;14mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 570pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.801nF |
| Type | N-Channel |
N-Channel 40V 55A 100W Surface Mount TO-252