VBsemi Elec · FETs & Power MOSFETs · MPN IPD082N10N3G-VB
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| Gate Charge(Qg) | 160nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 85A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 176W |
| Reverse Transfer Capacitance (Crss@Vds) | 205pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4nF |
N-Channel 100V 85A 176W Surface Mount TO-252