VBsemi Elec · FETs & Power MOSFETs · MPN IPD053N08N3G-VB
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 35.5nC@10V |
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 950pF |
| Current - Continuous Drain(Id) | 75A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 62.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 76pF |
| RDS(on) | 5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.855nF |
N-Channel 80V 75A 62.5W Surface Mount TO-252