VBsemi Elec · FETs & Power MOSFETs · MPN IPD053N06N3G-VB
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| Gate Charge(Qg) | 125nC@10V |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 555pF |
| Current - Continuous Drain(Id) | 97A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 136W |
| Reverse Transfer Capacitance (Crss@Vds) | 250pF |
| RDS(on) | 14.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.06nF |
N-Channel 60V 97A 136W Surface Mount TO-252