VBsemi Elec IPD031N03LG-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IPD031N03LG-VB

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Specifications

Gate Charge(Qg)171nC@10V;81.5nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation250W
RDS(on)2mΩ@10V
Number1 N-channel
TypeN-Channel

Technical details

N-Channel 30V 120A 250W Surface Mount TO-252

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