VBsemi Elec · FETs & Power MOSFETs · MPN IPB80N06S2-H5-VB
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| Gate Charge(Qg) | 145nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 150A |
| Output Capacitance(Coss) | 715pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 220W |
| Reverse Transfer Capacitance (Crss@Vds) | 360pF |
| RDS(on) | 4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7nF |
| Type | N-Channel |
N-Channel 60V 150A 220W Surface Mount TO-263(D2Pak)