VBsemi Elec · FETs & Power MOSFETs · MPN IPB19DP10NMATMA1-VB
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 67nC@10V |
| Output Capacitance(Coss) | 330pF |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 2.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 280pF |
| RDS(on) | 240mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.765nF |
| Type | P-Channel |
P-Channel 100V 12A 2.1W Surface Mount D2PAK(TO-263)