VBsemi Elec IPB120N10S405ATMA1-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IPB120N10S405ATMA1-VB

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Specifications

Gate Charge(Qg)110nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)140A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation375W
RDS(on)4mΩ@10V
Number1 N-channel
TypeN-Channel

Technical details

N-Channel 100V 140A 375W Surface Mount D2PAK(TO-263)

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