VBsemi Elec · FETs & Power MOSFETs · MPN IPB120N10S405ATMA1-VB
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| Gate Charge(Qg) | 110nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 140A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 375W |
| RDS(on) | 4mΩ@10V |
| Number | 1 N-channel |
| Type | N-Channel |
N-Channel 100V 140A 375W Surface Mount D2PAK(TO-263)