VBsemi Elec IPB080N03LG-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IPB080N03LG-VB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)257nC@10V
Current - Continuous Drain(Id)98A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation250W
RDS(on)2.7mΩ@4.5V
Number1 N-channel
TypeN-Channel

Technical details

N-Channel 30V 98A Surface Mount TO-263(D2Pak)

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