VBsemi Elec IPB080N03L G-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IPB080N03L G-VB

No reviews yet — be the first to review VBsemi Elec IPB080N03L G-VB.

Specifications

Drain to Source Voltage30V
Gate Charge(Qg)257nC@10V
Current - Continuous Drain(Id)98A
Output Capacitance(Coss)1.725nF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3.13W
RDS(on)2.7mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)970pF
TypeN-Channel

Technical details

N-Channel 30V 98A 3.13W Surface Mount TO-263(D2Pak)

Related FETs & Power MOSFETs