VBsemi Elec IPB065N15N3 G-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IPB065N15N3 G-VB

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)75nC
Current - Continuous Drain(Id)160A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.5nF
TypeN-Channel

Technical details

N-Channel 150V 160A 300W Surface Mount TO-263-7L

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