VBsemi Elec · FETs & Power MOSFETs · MPN IPB044N15N5ATMA1-VB
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| Drain to Source Voltage | 150V |
|---|---|
| Gate Charge(Qg) | 75nC |
| Current - Continuous Drain(Id) | 160A |
| Output Capacitance(Coss) | 246pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 300W |
| RDS(on) | 5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.5nF |
| Type | N-Channel |
150V 160A 4.5V 300W 5mΩ@10V 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS