VBsemi Elec · FETs & Power MOSFETs · MPN IPB025N10N3G-VB
No reviews yet — be the first to review VBsemi Elec IPB025N10N3G-VB.
| Gate Charge(Qg) | 105nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 246pF |
| Current - Continuous Drain(Id) | 180A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 150W |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF |
| RDS(on) | 3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.2nF |
| Type | N-Channel |
N-Channel 100V 180A 150W Surface Mount TO-263-7L