VBsemi Elec · FETs & Power MOSFETs · MPN IPB017N10N5LFATMA1-VB
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| Gate Charge(Qg) | 80nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 250A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 300W |
| RDS(on) | 1.2mΩ@10V |
| Number | 1 N-channel |
| Type | N-Channel |
N-Channel 100V 250A 300W Surface Mount TO-263-7L