VBsemi Elec · FETs & Power MOSFETs · MPN IPB015N08N5ATMA1-VB
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| Gate Charge(Qg) | 105nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 180A |
| Output Capacitance(Coss) | 246pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF |
| RDS(on) | 3mΩ@10V |
| Input Capacitance(Ciss) | 8.2nF |
| Type | N-Channel |
N-Channel 100V 180A 300W TO-263-7