VBsemi Elec IPA80R460CEXKSA2-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IPA80R460CEXKSA2-VB

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Specifications

Gate Charge(Qg)73nC@10V
Drain to Source Voltage800V
Output Capacitance(Coss)65pF
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation156W
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)500mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.227nF
TypeN-Channel

Technical details

N-Channel 800V 11A 156W Through Hole TO-220F

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