VBsemi Elec · FETs & Power MOSFETs · MPN HUF75545P3-VB
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| Gate Charge(Qg) | 22nC@6V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 28.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 5W |
| Reverse Transfer Capacitance (Crss@Vds) | 376pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.855nF |
N-Channel 80V 28.6A 5W Through Hole TO-220AB