VBsemi Elec HM75N80-VB

VBsemi Elec · FETs & Power MOSFETs · MPN HM75N80-VB

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)35.5nC@10V
Output Capacitance(Coss)1.12nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation180W
Reverse Transfer Capacitance (Crss@Vds)376pF
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.855nF
TypeN-Channel

Technical details

N-Channel 80V 100A 180W Through Hole TO-220AB

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