VBsemi Elec HM70P04-VB

VBsemi Elec · FETs & Power MOSFETs · MPN HM70P04-VB

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Specifications

Gate Charge(Qg)280nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)1.51nF
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)1nF
RDS(on)4mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)11.3nF
TypeP-Channel

Technical details

P-Channel 40V 110A 375W Through Hole TO-220AB

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