VBsemi Elec HM4806A-VB

VBsemi Elec · FETs & Power MOSFETs · MPN HM4806A-VB

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)15nC@10V
Output Capacitance(Coss)117pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2.7W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)9mΩ@4.5V;12mΩ@2.5V
Number2 N-Channel
Input Capacitance(Ciss)586pF
TypeN-Channel

Technical details

N-Channel 20V 10A 2.7W Surface Mount SO-8

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