VBsemi Elec · FETs & Power MOSFETs · MPN HM4487-VB
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| Gate Charge(Qg) | 27.5nC@10V;23.2nC@6V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 2.5A |
| Output Capacitance(Coss) | 61pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 5.9W |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF |
| RDS(on) | 160mΩ@10V;200mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.19nF |
| Type | P-Channel |
P-Channel 100V 2.5A 5.9W Surface Mount SO-8