VBsemi Elec · FETs & Power MOSFETs · MPN HM30P55-VB
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| Gate Charge(Qg) | 78nC@10V;38nC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 50A |
| Output Capacitance(Coss) | 390pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 104.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 290pF |
| RDS(on) | 19mΩ@10V;26mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.7nF |
| Type | P-Channel |
P-Channel 60V 50A 104.2W Through Hole TO-220AB