VBsemi Elec · FETs & Power MOSFETs · MPN HAT2016R-VB
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| Gate Charge(Qg) | 15nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 117pF |
| Current - Continuous Drain(Id) | 6.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.78W |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| RDS(on) | 22mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 586pF |
| Type | N-Channel |
N-Channel Array 30V 6.8A 1.78W Surface Mount SO-8