VBsemi Elec HAF2026RJ-VB

VBsemi Elec · FETs & Power MOSFETs · MPN HAF2026RJ-VB

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Specifications

Gate Charge(Qg)18nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)7A
Output Capacitance(Coss)750pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation4W
RDS(on)30mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)140pF
Number2 N-Channel
Input Capacitance(Ciss)750pF
TypeN-Channel

Technical details

N-Channel 60V 7A 4W Surface Mount SO-8

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