VBsemi Elec FS10KM-12A-VB

VBsemi Elec · FETs & Power MOSFETs · MPN FS10KM-12A-VB

No reviews yet — be the first to review VBsemi Elec FS10KM-12A-VB.

Specifications

Drain to Source Voltage650V
Gate Charge(Qg)5.4nC@10V
Current - Continuous Drain(Id)10A
Output Capacitance(Coss)400pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation178W
Reverse Transfer Capacitance (Crss@Vds)240pF
RDS(on)820mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.9nF
TypeN-Channel

Technical details

N-Channel 650V 10A 178W Through Hole TO-220F

Related FETs & Power MOSFETs