VBsemi Elec · FETs & Power MOSFETs · MPN FQT3P20TF-VB
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| Output Capacitance(Coss) | 28pF |
|---|---|
| Pd - Power Dissipation | - |
| Configuration | - |
| Gate Charge(Qg) | 8nC@10V |
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF |
| RDS(on) | 800mΩ@10V;900mΩ@6V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 370pF |
P-Channel 200V 2A Surface Mount SOT-223