VBsemi Elec · FETs & Power MOSFETs · MPN FQT13N06L-VB
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| Gate Charge(Qg) | 22nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 120pF |
| Current - Continuous Drain(Id) | 4.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 4W |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| RDS(on) | 76mΩ@10V;85mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 810pF |
| Type | N-Channel |
N-Channel 60V 4.5A 4W Surface Mount SOT-223