VBsemi Elec · FETs & Power MOSFETs · MPN FQPF5P20-VB
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| Output Capacitance(Coss) | 65pF |
|---|---|
| Pd - Power Dissipation | 20.1W |
| Configuration | - |
| Gate Charge(Qg) | 11.7nC |
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Reverse Transfer Capacitance (Crss@Vds) | 41pF |
| RDS(on) | 1Ω@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.255nF |
20.1W 200V 1V 1Ω@10V 1 P-Channel P-Channel TO-220F Single FETs, MOSFETs RoHS