VBsemi Elec · FETs & Power MOSFETs · MPN FQPF10N20C-VB
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| Gate Charge(Qg) | 16nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 260pF |
| Current - Continuous Drain(Id) | 6.5A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 37W |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| RDS(on) | 265mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 360pF |
| Type | N-Channel |
N-Channel 200V 6.5A 37W Through Hole TO-220F