VBsemi Elec · FETs & Power MOSFETs · MPN FQP7N10-VB
4.0/5 from 1 engineer review.
| Gate Charge(Qg) | 28nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 260pF |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 105W |
| RDS(on) | 127mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| Input Capacitance(Ciss) | 1.3nF |
| Type | N-Channel |
N-Channel 100V 18A 105W Through Hole TO-220AB