VBsemi Elec · FETs & Power MOSFETs · MPN FQD4P25TM_WS-VB
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| Gate Charge(Qg) | 38nC@10V |
|---|---|
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | 6A |
| Output Capacitance(Coss) | 170pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 85W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 1Ω@10V |
| Input Capacitance(Ciss) | 680pF |
| Type | P-Channel |
P-Channel 250V 6A 85W Surface Mount TO-252