VBsemi Elec · FETs & Power MOSFETs · MPN FQD16N25CTM-VB
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| Drain to Source Voltage | 250V |
|---|---|
| Gate Charge(Qg) | 68nC@10V |
| Output Capacitance(Coss) | 330pF |
| Current - Continuous Drain(Id) | 17A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 330pF |
| RDS(on) | 176mΩ@10V |
| Input Capacitance(Ciss) | 1.3nF |
| Type | N-Channel |
250V 17A 4V 125W 176mΩ@10V N-Channel TO-252 Single FETs, MOSFETs RoHS