VBsemi Elec · FETs & Power MOSFETs · MPN FQD12P10-VB
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| Output Capacitance(Coss) | 65pF |
|---|---|
| Pd - Power Dissipation | 32.1W |
| Configuration | - |
| Gate Charge(Qg) | 23.2nC@10V;11.7nC@4.5V |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 8.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Reverse Transfer Capacitance (Crss@Vds) | 41pF |
| RDS(on) | 250mΩ@10V;280mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.055nF |
P-Channel 100V 8.8A 32.1W Surface Mount TO-252