VBsemi Elec · FETs & Power MOSFETs · MPN FQB50N06L-VB
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 47nC@10V |
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 470pF |
| Current - Continuous Drain(Id) | 75A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF |
| RDS(on) | 11mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.3nF |
N-Channel 60V 75A Surface Mount TO-263(D2PAK)