VBsemi Elec · FETs & Power MOSFETs · MPN FIR4N65FG-VB
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 48nC@10V |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 177pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 30W |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| RDS(on) | 2.5Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.08nF |
N-Channel 650V 4A 30W Through Hole TO-220F