VBsemi Elec FDT439N-VB

VBsemi Elec · FETs & Power MOSFETs · MPN FDT439N-VB

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Specifications

Gate Charge(Qg)6nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)67pF
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))500mV
Pd - Power Dissipation4W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)19mΩ@10V;21mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)295pF
TypeN-Channel

Technical details

N-Channel 30V 7A 4W Surface Mount SOT-223

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