VBsemi Elec · FETs & Power MOSFETs · MPN FDS8949-F085-VB
No reviews yet — be the first to review VBsemi Elec FDS8949-F085-VB.
| Output Capacitance(Coss) | 175pF |
|---|---|
| Pd - Power Dissipation | 4.1W |
| Configuration | - |
| Gate Charge(Qg) | 5.9nC |
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| RDS(on) | 10mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 641pF |
4.1W 40V 1.2V 10mΩ@10V 2 N-Channel N-Channel SO-8 Single FETs, MOSFETs RoHS