VBsemi Elec · FETs & Power MOSFETs · MPN FDS8935-VB
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| Gate Charge(Qg) | 5.65nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 162pF |
| Current - Continuous Drain(Id) | 4.5A |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 155mΩ@4.5V |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 515pF |
| Type | P-Channel |
P-Channel 100V 4.5A Surface Mount SO-8