VBsemi Elec FDS86242-VB

VBsemi Elec · FETs & Power MOSFETs · MPN FDS86242-VB

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Specifications

Gate Charge(Qg)28.5nC@10V
Drain to Source Voltage150V
Output Capacitance(Coss)160pF
Current - Continuous Drain(Id)5.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation5.9W
Reverse Transfer Capacitance (Crss@Vds)37pF
RDS(on)80mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.735nF
TypeN-Channel

Technical details

N-Channel 150V 5.4A 5.9W Surface Mount SO-8

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