VBsemi Elec FDMS86163P-VB

VBsemi Elec · FETs & Power MOSFETs · MPN FDMS86163P-VB

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Specifications

Gate Charge(Qg)76nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)28A
Output Capacitance(Coss)390pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation10.4W
Reverse Transfer Capacitance (Crss@Vds)290pF
RDS(on)36mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)3.5nF
TypeP-Channel

Technical details

P-Channel 100V 28A Surface Mount DFN5x6-8

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