VBsemi Elec FDMS8018-VB

VBsemi Elec · FETs & Power MOSFETs · MPN FDMS8018-VB

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Specifications

Gate Charge(Qg)83nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)1.725nF
Current - Continuous Drain(Id)33A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation3.75W
Reverse Transfer Capacitance (Crss@Vds)970pF
RDS(on)1.8mΩ@10V;2.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)9.9nF
TypeN-Channel

Technical details

N-Channel 30V 33A 3.75W Surface Mount DFN5x6-8

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