VBsemi Elec FDMS4435BZ-VB

VBsemi Elec · FETs & Power MOSFETs · MPN FDMS4435BZ-VB

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Specifications

Gate Charge(Qg)102nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)880pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)820pF
RDS(on)8mΩ@10V;9mΩ@6V;12mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)4.62nF
TypeP-Channel

Technical details

P-Channel 30V 60A 75W Surface Mount DFN5x6-8

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