VBsemi Elec · FETs & Power MOSFETs · MPN FDMS4435BZ-VB
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| Gate Charge(Qg) | 102nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 880pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 75W |
| Reverse Transfer Capacitance (Crss@Vds) | 820pF |
| RDS(on) | 8mΩ@10V;9mΩ@6V;12mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.62nF |
| Type | P-Channel |
P-Channel 30V 60A 75W Surface Mount DFN5x6-8