VBsemi Elec FDME1034CZT-VB

VBsemi Elec · FETs & Power MOSFETs · MPN FDME1034CZT-VB

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Specifications

Gate Charge(Qg)63nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)30A
Output Capacitance(Coss)115pF
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3.1W;2.7W
RDS(on)45mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)57pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.2nF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 30V Surface Mount DFN3x3-8

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