VBsemi Elec · FETs & Power MOSFETs · MPN FDMC6686P-VB
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| Output Capacitance(Coss) | 910pF |
|---|---|
| Pd - Power Dissipation | 54W |
| Drain to Source Voltage | 20V |
| Configuration | - |
| Gate Charge(Qg) | 21.5nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Reverse Transfer Capacitance (Crss@Vds) | 813pF |
| RDS(on) | 4mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.595nF |
54W 20V 1V 4mΩ@10V 1 P-Channel P-Channel DFN-8(3x3) Single FETs, MOSFETs RoHS